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Intel installs industry's first commercial high-NA EUV lithography tool — ASML Twinscan EXE:5200B sets the stage for 14A
B, the first High-NA EUV lithography tool designed for commercial production, reiterating Intel's plans to use High-NA EUV patterning for 14A process technology and onwards.
KemLab Inc., a pioneering developer of advanced materials for microelectronics and MEMS applications, is pleased to offer a high-quality solution tailored to address the requirements of ...
TOKYO--(BUSINESS WIRE)--Dai Nippon Printing Co., Ltd. (DNP, TOKYO: 7912) has successfully achieved the fine pattern resolution required for photomasks for logic semiconductors of the beyond 2nm (nm: ...
SANTA CLARA, Calif., Feb. 28, 2023 (GLOBE NEWSWIRE) -- Applied Materials, Inc. today introduced a new eBeam metrology system specifically designed to precisely measure the critical dimensions of ...
The future of semiconductor technology is often viewed through the lenses of photolithography equipment, which continues to offer better resolution for future process nodes despite an almost perpetual ...
Steven Scheer: "The opening of the joint ASML-imec High NA EUV Lithography Lab in Veldhoven, the Netherlands, marked a milestone in preparing High NA EUV for adoption in mass manufacturing [1].
ASML and Intel have reached the "First Light" milestone using ASML's latest High-NA lithography system, turning on its light source and making the light reach resist on the wafer. The report is coming ...
A new technical paper titled “Statistics of EUV exposed nanopatterns: Photons to molecular dissolutions” was published by Hiroshi Fukuda, Hitachi High-Tech Corporation. “For higher computing power of ...
Complexity And Cost: X-ray sources and masks are expensive and require specialised facilities, making the overall process costly. Proximity Printing: The need for proximity between the mask and resist ...
Commences sample supply of high-NA EUV photomasks for next-generation semiconductors Dai Nippon Printing Co., Ltd. (DNP, TOKYO: 7912) has successfully achieved the fine pattern resolution required for ...
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