Many PWM (pulse-width-modulated) applications, such as Class D audio amplifiers, require symmetric drive circuitry. Comprising complementary N- and P-channel FET devices with gates and sources ...

Determine VGS and VDS for the E-MOSFET circuit in the figure. Assume this particular MOSFET has minimum values of ID(on) = 200mA at VGS = 4V and VGS(th) = 2V. We then calculate ID for VGS = 3.13V.

Despite recent improvements in the performance of RF LDMOS field-effect transistors (FETs), temperature drift and aging continue to affect the efficiency and linearization of power amplifiers using ...

If you ever work with a circuit that controls a decent amount of current, you will often encounter a FET – a Field-Effect Transistor. Whether you want to control a couple of powerful LEDs, switch a ...

Unlike power switching FETs, RF FETs are designed to work best in the linear region of operation to maximize power gain and minimize distortion, whereas power switching devices are optimized for ...