CYPRESS, Calif.--(BUSINESS WIRE)--Mitsubishi Electric US, Inc. announced a new version of its 2.0kV LV100 insulated-gate bipolar transistor (IGBT) module specifically designed for photovoltaic (PV) ...

Mitsubishi announced the development of a new version of its 2.0-kV IGBT module in an LV100 package intended specifically for photovoltaic applications. The power module, which fills the gap between 1 ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of its LV100-type T-series 2.0kV insulated-gate bipolar transistor (IGBT) ...

Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...

Six-model lineup of compact T-PMs and other modules will lead to smaller, more efficient inverters for xEVs As power semiconductors capable of efficiently converting electricity expand and diversify ...

Power Integrations has launched the SCALE-iFlex Single plug-and-play gate-drivers for the “new dual” 100 × 140 mm IGBT modules. The gate drivers support modules up to 3.3 kV and are suited for ...

Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will launch new standard-isolation (6.0kVrms) and high-isolation (10.2kVrms) modules in its 4.5kV/1,200A XB Series of high-voltage ...

Recent developments in IGBT and FWD (free wheeling diode) devices are enabling designers to achieve higher switching performance, lower electrical losses, and higher temperature operation in high ...

Mitsubishi Electric has introduced a new High Voltage Integrated Circuit (HVIC) to drive IGBT power modules dedicated for 400V AC lines. Mitsubishi Electric has introduced a new High Voltage ...

Cissoid, the Belgian power semiconductor specialist, is introducing new families of power modules designed for automotive, industrial, and energy markets and covering a wide variety of current and ...