Based on several high-power applications, we can see a clear trend of using power modules and discrete MOSFETs. There is a significant overlap between both, roughly from 10 kW to 50 kW. Modules fit ...

Silicon (Si)-based semiconductors have a decades-long head start over wide-bandgap (WBG) semiconductors, primarily silicon carbide (SiC) and gallium nitride (GaN), and still own about 90% to 98% of ...

In the first installment of this two-part article on paralleling eGaN FETs, five basic designs, utilizing four EPC2001 (100 V, 25 A) paralleled devices per switch in a half bridge configuration were ...

This application note investigates using multiple MAX40200 ICs in parallel and their combined performance. The multiple ideal-diode solution should provide the same characteristics of a single, larger ...