I R (International Rectifier), the first to build GaN (gallium-nitride) devices on silicon, has now introduced GaNpowIR, its first product on a GaN platform. GaN-device structures are not new; using a ...

Paralleling GaN transistors increases the power handling capability of a high-efficiency and high-power density converter. To be successful, parallel operation depends on the designer’s ability ...

GaN transistors still compete with other power devices such as the LDMOS and SiC MOSFETs. However, GaN devices offer some superior specifications and features that set them apart.

Nitronex has developed a gallium nitride high electron mobility transistor (HEMT) that delivers 45W at 28V for high PAR (peak to average ratio) and pulsed ...

600 V breakdown enhancement-mode GaN power transistors packed into the industry's smallest footprint will be shipped in July 2015. The power transist ...

This transistor, with twice the current capability of GaN Systems’ highest rated current part, allows customers to effectively double the power processing for the same volume.

Panasonic has been already mass-producing GaN power transistors called GIT. This new MIS type GaN power transistor was developed as a future technology to achieve higher-speed operation.

Infineon has announced bi-directional GaN power transistors at 40, 650 and 850V, and a current sensing GaN transistor. There are two types of ...

The EPC2050 offers power systems designers a 350 V, 80 mΩ maximum R DS(on), 26 A peak current power transistor in an extremely small chip-scale package. These new devices are ideal for multi ...

Gallium nitride-based LEDs and power transistors can be made on the same IC, according to scientists from Cornell University and the Polish Academy of Sciences. The trick is to used both sides of the ...

Infineon introduces first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use.