The SiC MPS diodes from RIR Power Electronics Limited are silicon carbide merged-PiN Schottky devices rated up to 1200 V, combining Schottky and PiN structures to balance low switching losses with ...
Abstract: We present electrical and optical (at a wavelength of 850 nm) measurement results of SOI PIN-diodes without a front-gate, with an intrinsic Si film thickness of only 6 nm. These PIN-diodes ...
Abstract: This work presents a detailed investigation of the reverse recovery behaviour in 1200 V SiC MOSFET body diodes. Unlike modern Si-pin diodes which are optimised for soft reverse recovery, the ...
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