The new power system in package couples an updated BCD driver with a high-performance GaN power transistor that has just ...

Adding big blocks of SRAM to collections of AI tensor engines, or better still, a waferscale collection of such engines, turbocharges AI inference, as has ...

EPC’s first seventh-generation eGaN® device enters mass production, delivering up to 3× better performance than silicon ...

STMicroelectronics has expanded its GaN‑based power device portfolio with the launch of MasterGaN6, the first device in the company’s second‑generation MasterGaN half‑bridge family. The new integrated ...

For decades, optical inspection has been the primary method for process control in fabs. However, the move to multi-level interconnects and 3D transistor designs means that many killer defects are no ...

GENEVA, SWITZERLAND, February 24, 2026 / EINPresswire.com / — STMicroelectronics has introduced MasterGaN6, beginning the second generation of the MasterGaN half-bridge family. The new power system in ...

Design engineers are increasingly turning to 3D ICs to keep pace with the ascent of next-generation AI scaling.

Intel's 18A process is built around the Backside Power Delivery Network, or BSPDN, a structural overhaul known inside Intel as PowerVia. Instead of routing power through ...

The post Apple M5 Pro & M5 Max's New Chiplet Design Could Have a Performance Benefit appeared first on Android Headlines.

ZHUHAI, GUANGDONG, CHINA, January 21, 2026 /EINPresswire.com/ -- Environmental responsibility has transitioned from ...

While Qualcomm's 2nm semiconductor fabrication will happen overseas, the design work highlights India's expanding role in ...

Reliability is now a system-level concern that includes everything from materials and packaging to testing with backside power.