The company points out that first-half earnings cannot be extrapolated over the full year due to the lower seasonality of ...

Toshiba Electronics Europe has widened its SiC diode portfolio with ten new 1200V Schottky barrier diodes (SBDs).

ST says the new SiC MOSFET devices, which will be made available in 750V and 1200V classes, will improve energy efficiency ...

Researchers from the Seoul National University (SNU) in collaboration with the Daegu Gyeongbuk Institute of Science and Technology (DGIST), have developed a printing-based selective metal film ...