Abstract: Device scaling in advanced CMOS nodes is becoming more difficult due to patterning limitations and complex 3-D transistor integration schemes. This also makes the devices more sensitive to ...
A Cornell-designed transistor may supercharge next-gen wireless tech while easing reliance on foreign gallium, according to The Cornell Chronicle. The XHEMT device, built with ultra-thin gallium ...
Faith writes guides, how-tos, and roundups on the latest Android games and apps for Android Police. You'll find her writing about the newest free-to-play game to hit Android or discussing her paranoia ...
With a new year well underway, it’s a good time to think about your strategy to obtain, or keep, airline elite status. Whatever one’s chosen carrier, many airline credit cards can help earn elite ...
A new technical paper titled “Inner Gate Length Modulation of MFMIS Nanosheet FET Memory for Advanced Technology Nodes” was published by researchers at Samsung and Seoul National University. Find the ...
ABSTRACT: This paper presents the performance evaluation of a single-phase five-level transistor-clamped H-bridge (TCHB) inverter, which is a modified circuit based on H-bridge inverter topology ...
1 Faculty of Electrical Technology and Engineering, Universiti Teknikal Malaysia Melaka, Melaka, Malaysia. 2 Higher Institution Centre of Excellence (HICoE), UM Power Energy Dedicated Advanced Centre ...
Ising machines demonstrate significant potential to tackle computationally complex challenges, including combinatorial optimization problems related to logistics, manufacturing, finance, and AI. The ...
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