These releases underscore NoMIS Power's continued expansion toward higher-voltage and higher-current SiC devices and mark NoMIS' first 1.7 kV SiC MOSFET offering, with high-resistance small-die ...

You’ve just finished assembling an electronic project and are ready to power it up, only to realize the battery might be connected backwards. In an instant, a simple mistake can destroy hours of work.

1 SIAME Laboratory, University Pau-Pays de l’Adour (UPPA), Pau, France. 2 Alstom Transports S. A., Séméac, France. 3 LabCEEM, University of Toulouse, Tarbes, France. Simulations using these analytical ...

This novel approach does not require any change to the fundamental design, layout, or control circuitry of the SiC MOSFET. Many methods exist to improve the SCWT’s focus on reducing the FET saturation ...

This circuit has a behavior where it seems that a large current is being supplied by the op-amp's inverting input, which I suspect is unphysical. It's supposed to be a variable PWM circuit. The 5 ...

Monolithically integrated GaN power ICs offer significant advantages over traditional silicon chips, including superior efficiency, smaller size, higher speed, and reduced cost. What makes GaN so ...

Abstract: This article is focused on an industrial auxiliary power supply based on flyback topology using a 1.7kV SiC MOSFET as the main switch. The goal of this article is to show applicable circuit ...

Vishay Intertechnology's Siliconix SiJK140E 40V MOSFET is said to reduce on-resistance by 32% while offering 58% lower on-resistance than 40V MOSFETs in the TO-263-7L. Minimizes power losses from ...

This article, by Oleksii Kravchenko, Team Lead Application Engineering, Renesas Electronics, Lviv, Ukraine, demonstrates how to implement analog/digital PWM using the AnalogPAK as the main control ...