An interview with the co-founders of DG Matrix sheds light on its SiC-based multiport SST backed by multiple patents. DG Matrix is the first company to deliver a commercially available, multiport ...

Navitas’ new UHV SiC uses its trench-assist planar (TAP) architecture to effectively handle common failure modes associated with trench-based MOSFETs. Navitas announced the release of their 2300V and ...

Designed for modern motor-drive applications, the high-efficiency GaN power integration solution targets both white goods and factory automation systems. STMicroelectronics has introduced a new ...

While Na-ion batteries were initially studied and demonstrated alongside Li-ion ones at around the same time (late 1970s), some key technical advantages spurred the successful commercialization of ...

As a semiconductor material, diamond delivers the trifecta unmatched thermal conductivity, wide bandgap, and extreme reliability. Diamond’s ultra-wide bandgap, record thermal conductivity, high ...

Wireless power transfer (WPT) has several applications, including charging mobile devices, industrial robotics, tools and drones, and charging EVs. Wireless power transfer (WPT) can have wide-ranging ...

Tsuriel Avraham and his colleagues from Ariel University reviewed reliability challenges and models for SiC and GaN power devices. Silicon carbide and gallium nitride devices are seeing increased ...

GaN-on-Si is the technology of choice for commercially available power HEMT devices. The dominant maximum operating voltage range for these devices is currently at 650 V or lower. Challenges arise in ...

APEC has been a cornerstone of the power electronics industry since its inception. This year’s conference marked the 40th anniversary of APEC, which has grown significantly since its founding in 1986, ...

One of the more spirited seminars at APEC, due to its topic of GaN versus SiC, was an insightful discussion with many compelling arguments. Wide-bandgap semiconductors—specifically gallium nitride and ...

Future Electronics’ power system design laboratory, based in London, has implemented a SiC-MOSFET-based design for a 3-kW LLC power supply, which steps a nominal 390-VDC input down to a 49-VDC nominal ...

GaN power devices have gained prominence in medium- and high-power applications due to their ability to operate at high frequencies while maintaining excellent efficiency. Deliver higher efficiency, ...